j. (-x , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC2078 description ? collector-emitter voltage- :vcer= 75v(min) ;rbe=150q ? collector current- :lc=3a applications ? 27mhz rf power amplifier applications absolute maximum ratings(ta=25'c) symbol vcbo vcer vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage rbe=150o emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ ta=25"c collector power dissipation @ tc=50'c junction temperature storage temperature range value 80 75 5 3 5 1.2 10 150 -55-150 unit v v v a a w 'c r i^jjl \t \^ ^^^^^^k ^"s ^m \\'wbe \, collector \. emitter ? to-220ab package /' ?4 ^ q j r / -" ^'* i ^ 1 i " h dim h2 l6 a n f e fl l9 l4 gl *p f_i mm win 10,1 15,2 440 1.20 070 040 1.17 370 13.1 2 34 370 max 105 15, 6 4 6c 1.40 0.90 o.fio 1.37 4.20 13.7 274 3.90 a , c. \ n.i somi-c'inuluctors reserves the right lo change test conditions, parameter limits and package dimensions \\ithout notice. information furnished by nj semi-conductors is believed to he both accurate and reliable at the time ot'goii to pivss. i lowever. n.i semi-condiietors assumes no responsibility lor any errors or omissions discovered in its use. n.i semi-conductors encoura.ncs uusiomers to \crily that diilasheek are current be lore placing orders. qualify semi-conductors
silicon npn power transistor 2SC2078 electrical characteristics tc=25'c unless otherwise specified symbol v(br)cbo v(br)cer v(br)ebo vce(sat) vse(sat) icbo iebo hfe cob fi po n parameter collector-base breakdown voltage collector-emitter breakdown voltage ' emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain output capacitance current-gain ? bandwidth product output power power efficiency conditions lc=0.1ma; ib= 0 lc=1ma;rbe=150o le=0.1ma; lc=0 ic=1a; ib=0.1a lc=1a; ib= 0.1a vcb= 40v ; ie= 0 veb= 4v; lc= 0 lc= 500ma ; vce= 5v le=0;vcb=10v;ftest= 1mhz lc= 500ma; vce= 10v min 80 75 5 25 100 4.0 60 typ. 45 max 0.6 1.2 10 10 200 60 unit v v v v v u a u a pf mhz w % classifications b 25-50 c 40-80 d 60-120 e 100-200
|
